Epitaxial growth of radial Si p-i-n junctions for photovoltaic applications

نویسندگان

  • Jinkyoung Yoo
  • Shadi A. Dayeh
  • Wei Tang
  • S. T. Picraux
چکیده

Jinkyoung Yoo, Shadi A. Dayeh, Wei Tang, and S. T. Picraux Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, USA Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, USA

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

متن کامل

Session : Date : Time : Room : 03 . Narrow Gap and Compound Semiconductors 08 / 09 12 : 50

Details: Session: Date: Time: Room: 03.Narrow Gap and Compound Semiconductors 08/09 12:50 Exhibition Hall 1 Title: Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications Authors: Matteo Bosi1, Giovanni Attolini1, Marco Calicchio1, Claudio Ferrari1, Cesare Frigeri1, Enos Gombia1 1IMEM CNR Abstract: Low bandgap Ge homojunctions are normally used in photovoltaic mul...

متن کامل

On Approximate Stationary Radial Solutions for a Class of Boundary Value Problems Arising in Epitaxial Growth Theory

In this paper, we consider a non-self-adjoint, singular, nonlinear fourth order boundary value problem which arises in the theory of epitaxial growth. It is possible to reduce the fourth order equation to a singular boundary value problem of second order given by w''-1/r w'=w^2/(2r^2 )+1/2 λ r^2. The problem depends on the parameter λ and admits multiple solutions. Therefore, it is difficult to...

متن کامل

A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices

We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230...

متن کامل

Simple Photovoltaic Device Based on Multiwall Carbon Nanotube/Silicon Heterojunction

Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013